| Channel Type |
P |
| Channel Mode |
Enhancement |
| Configuration |
Single Dual Drain |
| Maximum Drain Source Voltage (V) |
60 |
| Maximum Continuous Drain Current (A) |
2.5 |
| Maximum Gate Source Voltage (V) |
±20 |
| Maximum Drain Source Resistance (mOhm) |
300@10V |
| Typical Gate Charge @ Vgs (nC) |
11@10V |
| Typical Gate Charge @ 10V (nC) |
11 |
| Maximum Power Dissipation (mW) |
3000 |
| Process Technology |
TMOS |
| Category |
Power MOSFET |
| Typical Input Capacity @ Vds (pF) |
601@30V |
| Typical Turn-On Delay Time (ns) |
12 |
| Typical Turn-Off Delay Time (ns) |
19 |
| Typical Fall Time (ns) |
6 |
| Typical Rise Time (ns) |
10 |
| Number of Elements per Chip |
1 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
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