| Channel Type |
N |
| Channel Mode |
Enhancement |
| Configuration |
Single |
| Maximum Drain-Source Voltage (V) |
150 |
| Maximum Continuous Drain Current (A) |
18 |
| Maximum Gate-Source Voltage (V) |
±20 |
| Maximum Drain-Source Resistance (mOhm) |
5@10V |
| Typical Gate Charge @ Vgs (nC) |
75@10V |
| Typical Gate Charge @ 10V (nC) |
75 |
| Maximum Power Dissipation (mW) |
3800 |
| Process Technology |
PowerTrench |
| Category |
Power MOSFET |
| Typical Input Capacitance @ Vds (pF) |
6300@75V |
| Typical Turn-On Delay Time (ns) |
32 |
| Typical Turn-Off Delay Time (ns) |
45 |
| Typical Fall Time (ns) |
9 |
| Typical Rise Time (ns) |
14 |
| Maximum Gate-Source Leakage Current (nA) |
100 |
| Maximum Gate Threshold Voltage (V) |
4.5 |
| Maximum IDSS (uA) |
1 |
| Number of Elements per Chip |
1 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
175 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
175 |
| Tradename |
PowerTrench® |
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