NTD2955T4G onsemi MOSFET P-CH 60V 12A DPAK

label:
2023/09/13 347



■ Avalanche Energy Specified
■ IDSS and VDS(on) Specified at Elevated Temperature
■ Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes
■ NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
■ These Devices are Pb−Free and are RoHS Compliant


CATALOG
NTD2955T4G COUNTRY OF ORIGIN
NTD2955T4G PARAMETRIC INFO
NTD2955T4G PACKAGE INFO
NTD2955T4G MANUFACTURING INFO
NTD2955T4G PACKAGING INFO
NTD2955T4G ECAD MODELS


COUNTRY OF ORIGIN
Malaysia
China
Czechia
Japan
Thailand
United States of America
Viet Nam


PARAMETRIC INFO
Channel Type P
Channel Mode Enhancement
Configuration Single
Maximum Drain Source Voltage (V) 60
Maximum Continuous Drain Current (A) 12
Maximum Gate Source Voltage (V) ±20
Maximum Drain Source Resistance (mOhm) 180@10V
Typical Gate Charge @ Vgs (nC) 15@10V
Operating Junction Temperature (°C) -55 to 175
Typical Gate Charge @ 10V (nC) 15
Maximum Power Dissipation (mW) 55000
Minimum Gate Threshold Voltage (V) 2
Category Power MOSFET
Typical Gate to Drain Charge (nC) 7
Typical Output Capacitance (pF) 150
Typical Gate to Source Charge (nC) 4
Maximum Junction Ambient Thermal Resistance 100°C/W
Maximum Junction Case Thermal Resistance 2.73°C/W
Maximum Positive Gate Source Voltage (V) 20
Typical Input Capacitance @ Vds (pF) 500@25V
Typical Gate Threshold Voltage (V) 2.8
Typical Reverse Transfer Capacitance @ Vds (pF) 50@25V
Typical Reverse Recovery Charge (nC) 100
Typical Diode Forward Voltage (V) 1.6
Maximum Diode Forward Voltage (V) 2.5
Typical Reverse Recovery Time (ns) 50
Typical Forward Transconductance (S) 8
Maximum Pulsed Drain Current @ TC=25°C (A) 18
Typical Turn-On Delay Time (ns) 10
Typical Turn-Off Delay Time (ns) 26
Typical Fall Time (ns) 48
Typical Rise Time (ns) 45
Maximum Gate Source Leakage Current (nA) 100
Maximum Gate Threshold Voltage (V) 4
Maximum IDSS (uA) 10
Number of Elements per Chip 1
Minimum Storage Temperature (°C) -55
Maximum Storage Temperature (°C) 175
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175


PACKAGE INFO
Supplier Package DPAK
Basic Package Type Lead-Frame SMT
Pin Count 3
Lead Shape Gull-wing
PCB 2
Tab Tab
Pin Pitch (mm) 2.29
Package Length (mm) 6.73(Max)
Package Width (mm) 6.22(Max)
Package Height (mm) 2.38(Max)
Package Diameter (mm) N/R
Package Overall Length (mm) 6.73(Max)
Package Overall Width (mm) 10.41(Max)
Package Overall Height (mm) 2.51(Max)
Seated Plane Height (mm) 2.51(Max)
Mounting Surface Mount
Package Weight (g) N/A
Package Material Plastic
Package Description Deca Watt Package
Package Family Name TO-252
Jedec TO-252AA
Package Outline Link to Datasheet


MANUFACTURING INFO
MSL 1
Maximum Reflow Temperature (°C) 260
Reflow Solder Time (Sec) 30
Number of Reflow Cycle 3
Standard N/A
Reflow Temp. Source Link to Datasheet
Maximum Wave Temperature (°C) N/R
Wave Solder Time (Sec) N/R
Lead Finish(Plating) Matte Sn annealed
Under Plating Material N/A
Terminal Base Material CuNi
Number of Wave Cycles N/R


PACKAGING INFO
Packaging Suffix T4
Packaging Tape and Reel
Quantity Of Packaging 2500
Reel Diameter (in) 13
Reel Width (mm) 16.4(Min)
Packaging Document Link to Datasheet


ECAD MODELS



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