Channel Type |
P |
Channel Mode |
Enhancement |
Configuration |
Single |
Maximum Drain Source Voltage (V) |
60 |
Maximum Continuous Drain Current (A) |
12 |
Maximum Gate Source Voltage (V) |
±20 |
Maximum Drain Source Resistance (mOhm) |
180@10V |
Typical Gate Charge @ Vgs (nC) |
15@10V |
Operating Junction Temperature (°C) |
-55 to 175 |
Typical Gate Charge @ 10V (nC) |
15 |
Maximum Power Dissipation (mW) |
55000 |
Minimum Gate Threshold Voltage (V) |
2 |
Category |
Power MOSFET |
Typical Gate to Drain Charge (nC) |
7 |
Typical Output Capacitance (pF) |
150 |
Typical Gate to Source Charge (nC) |
4 |
Maximum Junction Ambient Thermal Resistance |
100°C/W |
Maximum Junction Case Thermal Resistance |
2.73°C/W |
Maximum Positive Gate Source Voltage (V) |
20 |
Typical Input Capacitance @ Vds (pF) |
500@25V |
Typical Gate Threshold Voltage (V) |
2.8 |
Typical Reverse Transfer Capacitance @ Vds (pF) |
50@25V |
Typical Reverse Recovery Charge (nC) |
100 |
Typical Diode Forward Voltage (V) |
1.6 |
Maximum Diode Forward Voltage (V) |
2.5 |
Typical Reverse Recovery Time (ns) |
50 |
Typical Forward Transconductance (S) |
8 |
Maximum Pulsed Drain Current @ TC=25°C (A) |
18 |
Typical Turn-On Delay Time (ns) |
10 |
Typical Turn-Off Delay Time (ns) |
26 |
Typical Fall Time (ns) |
48 |
Typical Rise Time (ns) |
45 |
Maximum Gate Source Leakage Current (nA) |
100 |
Maximum Gate Threshold Voltage (V) |
4 |
Maximum IDSS (uA) |
10 |
Number of Elements per Chip |
1 |
Minimum Storage Temperature (°C) |
-55 |
Maximum Storage Temperature (°C) |
175 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
175 |