| Type |
NPN |
| Configuration |
Single |
| Maximum Collector-Emitter Voltage (V) |
40 |
| Maximum Collector-Base Voltage (V) |
60 |
| Maximum Base-Emitter Voltage (V) |
6 |
| Maximum DC Collector Current (A) |
0.2 |
| Minimum Transition Frequency (MHz) |
300 |
| Maximum Power Dissipation (mW) |
250 |
| Typical Output Capacitance (pF) |
4(Max) |
| Maximum Emitter Cut-Off Current (nA) |
50 |
| Maximum Junction Case Thermal Resistance (°C/W) |
500 |
| Typical Input Capacitance (pF) |
8(Max) |
| Maximum Storage Time (ns) |
200 |
| Maximum Fall Time (ns) |
50 |
| Maximum Noise Figure (dB) |
5 |
| Maximum Delay Time (ns) |
35 |
| Maximum Rise Time (ns) |
35 |
| Operating Junction Temperature (°C) |
150 |
| Collector Current for VCE Saturation (mA) |
10|50 |
| Maximum Collector Cut-Off Current (nA) |
50 |
| Maximum Collector-Emitter Saturation Voltage (V) |
0.2@1mA@10mA|0.3@5mA@50mA |
| Maximum Base-Emitter Saturation Voltage (V) |
0.85@1mA@10mA|0.95@5mA@50mA |
| Category |
Bipolar Small Signal |
| Minimum DC Current Gain |
60@0.1mA@1V|80@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V |
| Number of Elements per Chip |
1 |
| Minimum Storage Temperature (°C) |
-65 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-65 |
| Maximum Operating Temperature (°C) |
150 |
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