| Density (bit) |
64M |
| Cell Type |
NOR |
| Interface Type |
Serial (SPI, Dual SPI, Quad SPI) |
| Block Organization |
Symmetrical |
| Boot Block |
No |
| Timing Type |
Synchronous |
| Architecture |
Sectored |
| Maximum Access Time (ns) |
8 |
| Programmability |
Yes |
| Typical Operating Supply Voltage (V) |
1.8 |
| Minimum Operating Temperature (°C) |
-40 |
| Maximum Operating Temperature (°C) |
125 |
| Supplier Temperature Grade |
Extended |
| Number of Bits per Word (bit) |
1/2/4 |
| Number of Words |
64M/32M/16M |
| Maximum Supply Current (mA) |
100 |
| Programming Voltage (V) |
1.7 to 2 |
| Sector Size |
64Kbyte x 128 |
| Program Current (mA) |
100 |
| Address Width (bit) |
32 |
| Minimum Operating Supply Voltage (V) |
1.7 |
| Maximum Operating Supply Voltage (V) |
2 |
| Maximum Erase Time (s) |
2.9/Sector |
| Maximum Programming Time (ms) |
2/Page |
| Command Compatible |
Yes |
| ECC Support |
Yes |
| Erase Suspend/Resume Modes Support |
Yes |
| Simultaneous Read/Write Support |
No |
| Support of Common Flash Interface |
Yes |
| Support of Page Mode |
No |
| Page Size |
256byte|512byte |
| Minimum Endurance (Cycles) |
100000 |
| Minimum Storage Temperature (°C) |
-65 |
| Maximum Storage Temperature (°C) |
150 |
| Density in Bits (bit) |
67108864 |
| Process Technology |
65nm |
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