| Density (bit) |
1G |
| Cell Type |
SLC NAND |
| Interface Type |
Parallel |
| Block Organization |
Symmetrical |
| Boot Block |
No |
| Timing Type |
Asynchronous |
| Architecture |
Sectored |
| Programmability |
Yes |
| Typical Operating Supply Voltage (V) |
3|3.3 |
| Minimum Operating Temperature (°C) |
-40 |
| Maximum Operating Temperature (°C) |
85 |
| Supplier Temperature Grade |
Industrial |
| Number of Bits per Word (bit) |
8 |
| Number of Words |
128M |
| Maximum Operating Current (mA) |
30 |
| Sector Size |
128Kbyte x 1024 |
| Program Current (mA) |
30 |
| Address Width (bit) |
28 |
| Minimum Operating Supply Voltage (V) |
2.7 |
| Maximum Operating Supply Voltage (V) |
3.6 |
| Maximum Erase Time (s) |
0.003/Block |
| Maximum Programming Time (ms) |
0.7 |
| Command Compatible |
Yes |
| ECC Support |
Yes |
| Erase Suspend/Resume Modes Support |
No |
| Simultaneous Read/Write Support |
No |
| Support of Common Flash Interface |
No |
| Support of Page Mode |
Yes |
| Page Size |
2Kbyte |
| Minimum Endurance (Cycles) |
100000(Typ) |
| Density in Bits (bit) |
1073741824 |
| Process Technology |
4nm |
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