Channel Type |
P |
Channel Mode |
Enhancement |
Configuration |
Single |
Maximum Drain Source Voltage (V) |
12 |
Maximum Continuous Drain Current (A) |
6 |
Maximum Gate Source Voltage (V) |
±8 |
Maximum Drain Source Resistance (mOhm) |
28@4.5V |
Typical Gate Charge @ Vgs (nC) |
9.5@4.5V |
Maximum Power Dissipation (mW) |
1100 |
Process Technology |
TrenchFET |
Category |
Power MOSFET |
Typical Input Capacitance @ Vds (pF) |
810@6V |
Typical Turn-On Delay Time (ns) |
7.1 |
Typical Turn-Off Delay Time (ns) |
52 |
Typical Fall Time (ns) |
26 |
Typical Rise Time (ns) |
5.4 |
Number of Elements per Chip |
1 |
Minimum Storage Temperature (°C) |
-55 |
Maximum Storage Temperature (°C) |
150 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
150 |