SI4484EY-T1-E3 Vishay / Siliconix MOSFET N-CH 100V 4.8A 8-SOIC

label:
2024/04/29 241

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC
• PWM Optimized
CATALOG
SI4484EY-T1-E3 COUNTRY OF ORIGIN
SI4484EY-T1-E3 PARAMETRIC INFO
SI4484EY-T1-E3 PACKAGE INFO
SI4484EY-T1-E3 MANUFACTURING INFO
SI4484EY-T1-E3 PACKAGING INFO


 
COUNTRY OF ORIGIN
China


 
PARAMETRIC INFO
Channel Type N
Channel Mode Enhancement
Configuration Single Quad Drain Triple Source
Maximum Drain Source Voltage (V) 100
Maximum Continuous Drain Current (A) 4.8
Maximum Gate Source Voltage (V) ±20
Maximum Drain Source Resistance (mOhm) 34@10V
Typical Gate Charge @ Vgs (nC) 24@10V
Typical Gate Charge @ 10V (nC) 24
Maximum Power Dissipation (mW) 3800
Category Power MOSFET
Typical Turn-On Delay Time (ns) 16
Typical Turn-Off Delay Time (ns) 35
Typical Fall Time (ns) 20
Typical Rise Time (ns) 10
Number of Elements per Chip 1
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175


 
PACKAGE INFO
Supplier Package SOIC N
Basic Package Type Lead-Frame SMT
Pin Count 8
Lead Shape Gull-wing
PCB 8
Tab N/R
Pin Pitch (mm) 1.27
Package Length (mm) 5(Max)
Package Width (mm) 4(Max)
Package Height (mm) 1.55(Max)
Package Diameter (mm) N/R
Package Overall Length (mm) 5(Max)
Package Overall Width (mm) 6.2(Max)
Package Overall Height (mm) 1.75(Max)
Seated Plane Height (mm) 1.75(Max)
Mounting Surface Mount
Package Weight (g) N/A
Package Material Plastic
Package Description Small Outline IC Narrow Body
Package Family Name SO
Jedec MS-012AA
Package Outline Link to Datasheet


 
MANUFACTURING INFO
MSL 1
Maximum Reflow Temperature (°C) 260
Reflow Solder Time (Sec) 20 to 40
Maximum Wave Temperature (°C) N/R
Wave Solder Time (Sec) N/R
Lead Finish(Plating) Matte Sn
Under Plating Material N/A
Terminal Base Material Cu


 
PACKAGING INFO
Packaging Suffix T1
Packaging Tape and Reel



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