| Channel Type |
N|P |
| Channel Mode |
Enhancement |
| Configuration |
Dual Common Quad Drain |
| Maximum Drain Source Voltage (V) |
20 |
| Maximum Continuous Drain Current (A) |
6.6@N Channel|3.8@P Channel |
| Maximum Gate Source Voltage (V) |
±12 |
| Maximum Drain Source Resistance (mOhm) |
20@4.5V@N Channel|60@4.5V@P Channel |
| Typical Gate Charge @ Vgs (nC) |
11@4.5V@N Channel|6@4.5V@P Channel |
| Maximum Power Dissipation (mW) |
2500 |
| Process Technology |
TrenchFET |
| Category |
Power MOSFET |
| Typical Turn-On Delay Time (ns) |
35@N Channel|20@P Channel |
| Typical Turn-Off Delay Time (ns) |
31@N Channel|55@P Channel |
| Typical Fall Time (ns) |
15@N Channel|35@P Channel |
| Typical Rise Time (ns) |
50@N Channel|35@P Channel |
| Number of Elements per Chip |
2 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
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