| Channel Type |
N |
| Channel Mode |
Enhancement |
| Configuration |
Single Quad Drain Triple Source |
| Maximum Drain Source Voltage (V) |
60 |
| Maximum Continuous Drain Current (A) |
6 |
| Maximum Gate Source Voltage (V) |
±20 |
| Maximum Drain Source Resistance (mOhm) |
22@10V |
| Typical Gate Charge @ Vgs (nC) |
18@10V |
| Typical Gate Charge @ 10V (nC) |
18 |
| Operating Junction Temperature (°C) |
-55 to 175 |
| Maximum Power Dissipation (mW) |
3300 |
| Process Technology |
TrenchFET |
| Category |
Power MOSFET |
| Typical Output Capacitance (pF) |
110 |
| Typical Gate to Drain Charge (nC) |
5.3 |
| Typical Gate to Source Charge (nC) |
3.4 |
| Maximum Junction Ambient Thermal Resistance |
90°C/W |
| Typical Gate Resistance (Ohm) |
1.4 |
| Typical Forward Transconductance (S) |
25 |
| Typical Turn-On Delay Time (ns) |
10 |
| Typical Turn-Off Delay Time (ns) |
25 |
| Typical Fall Time (ns) |
12 |
| Typical Rise Time (ns) |
10 |
| Maximum Gate Threshold Voltage (V) |
3 |
| Number of Elements per Chip |
1 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
175 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
175 |
One-stop supplier of IC products