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• 30 V N-channel Power MOSFET
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• Low R<sub>DS(on)</sub> (1.5 mΩ typical) for minimal conduction losses
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• High continuous drain current (100 A) and fast switching speed
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• Compact PowerPAK® SO-8 package for optimized PCB space and thermal efficiency
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• Integrated fast body diode for improved reverse conduction performance
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| CATALOG |
SI7288DP-T1-GE3 COUNTRY OF ORIGIN
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SI7288DP-T1-GE3 PARAMETRIC INFO
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SI7288DP-T1-GE3 PACKAGE INFO
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SI7288DP-T1-GE3 APPLICATIONS
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COUNTRY OF ORIGIN
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Malaysia
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Taiwan
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China
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PARAMETRIC INFO
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Technology
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TrenchFET® Power MOSFET
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Channel Type
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N-Channel
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Drain-Source Voltage (VDS)
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30 V
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Gate-Source Voltage (VGS)
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±20 V
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Continuous Drain
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100 A (at 25°C)
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Pulsed Drain Current
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400 A (limited by package)
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Drain-Source On-Resistance
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1.5 mΩ (typical at VGS=10 V), 2.0 mΩ (max)
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Power Dissipation
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250 W (at TC= 25°C)
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PACKAGE INFO
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• Package Type: PowerPAK® SO-8
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• Mounting Type: Surface Mount (SMD)
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• Pin Count: 8 leads
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• Package Dimensions: 5.0 mm × 6.0 mm × 1.1 mm (typical)
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• Mounting Style: Standard SO-8 footprint compatible
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• Lead Finish: 100% matte tin over copper (Pb-free)
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APPLICATIONS
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| • DC-DC converters and synchronous rectifiers |
| • Motor drivers and power management modules |
| • Battery protection and charging systems |
| • Load switches in industrial and automotive systems |
| • High-frequency switching in VRM (Voltage Regulator Module) designs |
| • Power supplies for computing, telecom, and consumer electronics |
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