| Channel Type |
P |
| Channel Mode |
Enhancement |
| Configuration |
Single Quad Drain Triple Source |
| Maximum Drain Source Voltage (V) |
150 |
| Maximum Absolute Continuous Drain Current (A) |
37 |
| Maximum Continuous Drain Current (A) |
37 |
| Maximum Gate Source Voltage (V) |
±20 |
| Maximum Drain Source Resistance (mOhm) |
47.5@10V |
| Typical Gate Charge @ Vgs (nC) |
25@7.5V|31.8@10V |
| Typical Gate Charge @ 10V (nC) |
31.8 |
| Operating Junction Temperature (°C) |
-55 to 150 |
| Maximum Power Dissipation (mW) |
6250 |
| Process Technology |
TrenchFET |
| Minimum Gate Threshold Voltage (V) |
2 |
| Category |
Power MOSFET |
| Typical Output Capacitance (pF) |
332 |
| Typical Gate to Drain Charge (nC) |
9.5 |
| Typical Gate to Source Charge (nC) |
9.2 |
| Maximum Junction Ambient Thermal Resistance |
20°C/W |
| Typical Gate Resistance (Ohm) |
3.4 |
| Maximum Junction Case Thermal Resistance |
1.2°C/W |
| Maximum Positive Gate Source Voltage (V) |
20 |
| Minimum Gate Resistance (Ohm) |
1.9 |
| Maximum Gate Resistance (Ohm) |
6 |
| Typical Input Capacitance @ Vds (pF) |
1805@75V |
| Typical Reverse Transfer Capacitance @ Vds (pF) |
14.5@75V |
| Typical Diode Forward Voltage (V) |
0.79 |
| Typical Reverse Recovery Charge (nC) |
245 |
| Maximum Diode Forward Voltage (V) |
1.1 |
| Typical Reverse Recovery Time (ns) |
75 |
| Maximum Pulsed Drain Current @ TC=25°C (A) |
50 |
| Typical Forward Transconductance (S) |
12 |
| Typical Turn-On Delay Time (ns) |
15 |
| Typical Turn-Off Delay Time (ns) |
28 |
| Typical Fall Time (ns) |
9 |
| Typical Rise Time (ns) |
7 |
| Maximum Gate Source Leakage Current (nA) |
100 |
| Maximum Gate Threshold Voltage (V) |
4 |
| Maximum IDSS (uA) |
1 |
| Number of Elements per Chip |
1 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
| Tradename |
TrenchFET® |
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