SSM3K37MFV,L3F Toshiba MOSFET N-CH 20V 0.25A VESM

label:
2024/02/27 354



CATALOG
SSM3K37MFV,L3F COUNTRY OF ORIGIN
SSM3K37MFV,L3F PARAMETRIC INFO
SSM3K37MFV,L3F PACKAGE INFO
SSM3K37MFV,L3F PACKAGING INFO
SSM3K37MFV,L3F ECAD MODELS


COUNTRY OF ORIGIN
Thailand


PARAMETRIC INFO
Channel Type N
Channel Mode Enhancement
Configuration Single
Maximum Drain Source Voltage (V) 20
Material Si
Maximum Continuous Drain Current (A) 0.25
Maximum Absolute Continuous Drain Current (A) 0.25
Maximum Gate Source Voltage (V) ±10
Maximum Drain Source Resistance (mOhm) 2200@4.5V
Maximum Power Dissipation (mW) 150
Category Small Signal
Typical Input Capacity @ Vds (pF) 12@10V
Number of Elements per Chip 1
Minimum Storage Temperature (°C) -55
Maximum Storage Temperature (°C) 150
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150


PACKAGE INFO
Supplier packaging VESM
Number of pins 3
PCB 3
ears N/R
Pin spacing (mm) 0.4
Package length (mm) 1.2
Package width (mm) 0.8
Package height (mm) not applicable
Package diameter (mm) N/R
Install Surface Mount
Package outline Link to datasheet

 
PACKAGING INFO
Package Tape and reel packaging
Packing quantity 8000


ECAD MODELS

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