| Channel Type |
N |
| Channel Mode |
Enhancement |
| Configuration |
Single |
| Maximum Drain Source Voltage (V) |
800 |
| Maximum Continuous Drain Current (A) |
3 |
| Maximum Gate Source Voltage (V) |
±30 |
| Maximum Drain Source Resistance (mOhm) |
3500@10V |
| Typical Gate Charge @ Vgs (nC) |
22.5@10V |
| Operating Junction Temperature (°C) |
-55 to 150 |
| Typical Gate Charge @ 10V (nC) |
22.5 |
| Maximum Power Dissipation (mW) |
80000 |
| Process Technology |
SuperMESH |
| Category |
Power MOSFET |
| Maximum Positive Gate Source Voltage (V) |
30 |
| Typical Input Capacitance @ Vds (pF) |
575@25V |
| Maximum Diode Forward Voltage (V) |
1.6 |
| Typical Turn-On Delay Time (ns) |
13 |
| Typical Turn-Off Delay Time (ns) |
35 |
| Typical Fall Time (ns) |
32 |
| Typical Rise Time (ns) |
12 |
| Maximum Gate Threshold Voltage (V) |
4.5 |
| Number of Elements per Chip |
1 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
| Supplier Temperature Grade |
Industrial |
One-stop supplier of IC products