Channel Type |
N |
Channel Mode |
Enhancement |
Configuration |
Single |
Maximum Drain Source Voltage (V) |
1200 |
Maximum Continuous Drain Current (A) |
12 |
Maximum Gate Source Voltage (V) |
±30 |
Maximum Drain Source Resistance (mOhm) |
690@10V |
Typical Gate Charge @ Vgs (nC) |
44.2@10V |
Typical Gate Charge @ 10V (nC) |
44.2 |
Maximum Power Dissipation (mW) |
40000 |
Process Technology |
MDmesh K5 |
Category |
Power MOSFET |
Typical Input Capacitance @ Vds (pF) |
1370@100V |
Typical Turn-On Delay Time (ns) |
23 |
Typical Turn-Off Delay Time (ns) |
68.5 |
Typical Fall Time (ns) |
18.5 |
Typical Rise Time (ns) |
11 |
Maximum Gate Source Leakage Current (nA) |
10000 |
Maximum Gate Threshold Voltage (V) |
5 |
Maximum IDSS (uA) |
1 |
Number of Elements per Chip |
1 |
Minimum Storage Temperature (°C) |
-55 |
Maximum Storage Temperature (°C) |
150 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
150 |