US1JFA onsemi / Fairchild DIODE GEN PURP 600V 1A SOD123FA

2025/07/30 11

• Glass Passivated Chip Junction

• Low Power Loss, High Efficiency

• Fast Switching Reverse Recovery Time: 50~75 ns Maximum

• High Surge Capacity

• UL Flammability 94V−0 Classification

• MSL 1 per J−STD−020

• NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free and are RoHS Compliant

CATALOG

China

Taiwan (Province of China)

Type	Switching Diode
Configuration	Single
Maximum DC Reverse Voltage (V)	600
Peak Reverse Repetitive Voltage (V)	600
Maximum Continuous Forward Current (A)	1
Speed	Ultra Fast Recovery Rectifier
Typical Junction Capacitance (pF)	15
Maximum Junction Ambient Thermal Resistance (°C/W)	153
Maximum Forward Voltage (V)	1.7
Peak Non-Repetitive Forward Surge Current (A)	30
Maximum RMS Reverse Voltage (V)	420
Peak Reverse Current (uA)	5
Peak Reverse Recovery Time (ns)	75
Operating Junction Temperature (°C)	-55 to 150
Minimum Storage Temperature (°C)	-55
Maximum Storage Temperature (°C)	150
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150

Packaging	Tape and Reel
Quantity Of Packaging	3000