Type |
PNP |
Configuration |
Single Dual Collector |
Maximum Collector-Emitter Voltage (V) |
60 |
Maximum Collector Base Voltage (V) |
100 |
Maximum Emitter Base Voltage (V) |
7 |
Maximum DC Collector Current (A) |
4.3 |
Material |
Si |
Maximum Power Dissipation (mW) |
2100 |
Maximum Junction Ambient Thermal Resistance |
83°C/W |
Maximum Junction Case Thermal Resistance |
21°C/W |
Maximum Turn-Off Time (ns) |
370(Typ) |
Maximum Collector Cut-Off Current (nA) |
20 |
Maximum Collector-Emitter Saturation Voltage (V) |
0.02@10mA@0.1A|0.065@100mA@1A|0.11@200mA@2A|0.215@500mA@5A |
Maximum Base Emitter Saturation Voltage (V) |
1.05@500mA@5A |
Category |
Bipolar Power |
Minimum DC Current Gain |
100@10mA@1V|100@2A@1V|45@5A@1V|10@10A@1V |
Number of Elements per Chip |
1 |
Maximum Turn-On Time (ns) |
39(Typ) |
Maximum Transition Frequency (MHz) |
120(Typ) |
Minimum Storage Temperature (°C) |
-55 |
Maximum Storage Temperature (°C) |
150 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
150 |
Supplier Temperature Grade |
Commercial |