| Type |
PNP |
| Configuration |
Single Dual Collector |
| Maximum Collector-Emitter Voltage (V) |
60 |
| Maximum Collector Base Voltage (V) |
100 |
| Maximum Emitter Base Voltage (V) |
7 |
| Maximum DC Collector Current (A) |
4.3 |
| Material |
Si |
| Maximum Power Dissipation (mW) |
2100 |
| Maximum Junction Ambient Thermal Resistance |
83°C/W |
| Maximum Junction Case Thermal Resistance |
21°C/W |
| Maximum Turn-Off Time (ns) |
370(Typ) |
| Maximum Collector Cut-Off Current (nA) |
20 |
| Maximum Collector-Emitter Saturation Voltage (V) |
0.02@10mA@0.1A|0.065@100mA@1A|0.11@200mA@2A|0.215@500mA@5A |
| Maximum Base Emitter Saturation Voltage (V) |
1.05@500mA@5A |
| Category |
Bipolar Power |
| Minimum DC Current Gain |
100@10mA@1V|100@2A@1V|45@5A@1V|10@10A@1V |
| Number of Elements per Chip |
1 |
| Maximum Turn-On Time (ns) |
39(Typ) |
| Maximum Transition Frequency (MHz) |
120(Typ) |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |
| Supplier Temperature Grade |
Commercial |
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