Infineon and ROHM Forge Strategic Collaboration in SiC Power Semiconductor Packaging

Infineon Technologies AG and ROHM Semiconductor have signed a Memorandum of Understanding (MoU) to collaborate on silicon carbide (SiC) power semiconductor packaging. The partnership will target applications such as onboard chargers, photovoltaic systems, energy storage solutions, and AI data centers. Under this agreement, both companies will serve as second-source suppliers for each other’s SiC device packages, giving customers greater flexibility in design and sourcing. Customers will be able to procure compatible devices from either Infineon or ROHM, ensuring seamless interoperability and interchangeability to meet specific application requirements.

Dr. Peter Wawer, President of Infineon’s Green Industrial Power Division, stated: “We are excited to join forces with ROHM to accelerate the adoption of SiC power switches. This cooperation expands customer choice, increases flexibility in design and procurement, and enables the development of more energy-efficient applications that contribute to global decarbonization efforts.”

Dr. Kazuhide Ino, Member of the Board, Managing Executive Officer, and Head of Power Device Business at ROHM, added: “ROHM is committed to providing optimal solutions for our customers. Partnering with Infineon is a key step forward, broadening our offering and driving innovation. Through this collaboration, we can simplify complexity, boost customer satisfaction, and shape the future of power electronics together.”

As part of the agreement, ROHM will adopt Infineon’s advanced top-side cooling SiC packaging platform, including TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK packages. These packages feature a standardized 2.3 mm height, which simplifies design, lowers system cooling costs, improves PCB space utilization, and doubles power density.

At the same time, Infineon will incorporate ROHM’s DOT-247 package in a SiC half-bridge configuration, complementing Infineon’s recently released dual TO-247 IGBT portfolio. ROHM’s DOT-247 packaging offers higher power density, reduced assembly complexity, and superior thermal and electrical performance compared to standard discrete packages. Featuring an integrated dual-TO-247 structure, DOT-247 achieves about 15% lower thermal resistance and 50% reduced inductance, resulting in 2.3 times higher power density.

Looking ahead, Infineon and ROHM plan to extend their cooperation into additional packaging technologies for both silicon and wide-bandgap semiconductors, including SiC and GaN. This will further broaden the range of solutions and sourcing options available to customers.

SiC-based semiconductors are transforming high-power applications by enabling faster switching, higher reliability under extreme conditions, and more compact system designs. Leveraging the combined strengths of Infineon and ROHM, customers can develop energy-efficient solutions with higher power density for electric vehicle charging, renewable energy systems, and AI data centers.