Infineon Launches First Radiation-Hardened GaN Transistors Manufactured In-House for Space Applications

On May 29, 2025, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) announced the release of its first radiation-hardened Gallium Nitride (GaN) transistor series, manufactured entirely in-house using the company’s proven CoolGaN™ platform. These new transistors are specifically engineered for the harsh conditions of space and represent the first internally produced GaN devices to achieve the highest quality and reliability certification under the MIL-PRF-19500/794 standard set by the United States Defense Logistics Agency (DLA) for the Joint Army-Navy Space (JANS) program.

Designed for critical space missions such as satellites, crewed spaceflight, and deep-space exploration, these high-electron-mobility transistors (HEMTs) combine the superior performance of GaN technology with Infineon’s five decades of expertise in high-reliability applications. The result is unmatched power efficiency, thermal management, and power density—enabling more compact, lightweight, and robust spacecraft systems. These new GaN devices complement Infineon’s established portfolio of radiation-hardened silicon MOSFETs, offering a comprehensive range of power solutions for aerospace applications.

Chris Opoczynski, Senior Vice President and General Manager of HiRel at Infineon, stated:
"With our new GaN transistor family, the Infineon team continues to push the boundaries of power system design. This milestone offers customers in the growing aerospace and defense markets the next generation of high-reliability power solutions—leveraging the outstanding material advantages of wide bandgap semiconductors for mission-critical applications."

The initial products in this radiation-hardened GaN transistor family are 100 V, 52 A devices that feature industry-leading performance, including a typical R_DS(on) of 4 mΩ and a total gate charge (Qg) of just 8.8 nC. Packaged in rugged, hermetically sealed ceramic SMD enclosures, the devices are hardened against single-event effects (SEE) with LET values of 70 MeV·cm²/mg (gold ion). Two variants, not yet JANS-certified, are tested to total ionizing doses (TID) of 100 krad and 500 krad. A third variant meets the stringent JANS certification with 500 krad TID compliance under MIL-PRF-19500/794.

Infineon is the industry’s first company to receive DLA JANS certification for GaN power devices manufactured entirely in-house. This certification demands rigorous testing, quality control, and qualification processes, placing Infineon at the forefront of GaN-based solutions for high-reliability space and defense systems. Before entering full-scale JANS production, Infineon has also completed multiple pilot production runs to validate long-term manufacturing consistency and reliability.