Infineon Unveils Next-Generation CoolSiC™ 750V G2 MOSFETs to Boost Power Density and Efficiency

On December 10, 2025, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) announced the launch of its new CoolSiC™ MOSFET 750 V G2 family, featuring advanced packaging options designed to maximize system efficiency and power density in both automotive and industrial power conversion applications. The latest generation is now available in multiple package types, including Q-DPAK and D2PAK, with a portfolio offering typical on-resistance (RDS(on)) values as low as 60 mΩ at 25°C.

The new series targets a wide range of end applications, such as onboard chargers and high/low-voltage DC-DC converters in electric vehicles, as well as industrial systems including server and telecom SMPS units and EV charging infrastructure. With options reaching ultra-low RDS(on) values down to 4 mΩ, the technology is exceptionally well suited for designs requiring outstanding static switching behavior—such as electronic fuses (eFuses), high-voltage battery disconnects, solid-state circuit breakers, and solid-state relays. This level of performance enables engineers to build more compact, efficient, and highly reliable systems that meet demanding specifications.

A standout feature of the CoolSiC MOSFET 750 V G2 technology is its top-side cooled Q-DPAK package, engineered to deliver exceptional thermal performance and long-term reliability. This package is optimized for high-power environments, making it a strong choice for designers seeking to push the boundaries of system efficiency and power density. The technology further offers excellent RDS(on) × QOSS and industry-leading RDS(on) × Qfr performance, helping to significantly reduce switching losses in both hard-switching and soft-switching topologies—resulting in superior efficiency in hard-switching use cases.

The new generation also features a high gate-threshold voltage VGS(th) (typically 4.5 V at 25°C) combined with an ultra-low QGD/QGS ratio, which greatly improves immunity to parasitic turn-on (PTO). In addition, Infineon has expanded the supported gate-drive voltage range, allowing static gate voltages down to −7 V and transient voltages down to −11 V. This enhanced voltage robustness provides greater design headroom and ensures optimal compatibility with other devices available on the market.