Infineon Wins Key ITC Ruling in GaN Patent Infringement Case Against Innoscience

The U.S. International Trade Commission (ITC) has determined that Innoscience violated one of Infineon Technologies AG’s (FSE: IFX / OTCQX: IFNNY) gallium nitride (GaN) technology patents.[1] The ITC’s initial ruling also confirms the validity of both Infineon patents asserted in the investigation.[2] At the center of the case is Innoscience’s alleged unauthorized use of Infineon’s patented GaN innovations. The Commission’s final decision is expected on April 2, 2026. If the initial findings are upheld, the infringing Innoscience products will be barred from entering the U.S. market.

“This ruling once again demonstrates the strength of Infineon’s intellectual property and reinforces our commitment to actively protecting our patent portfolio and ensuring fair competition,” said Johannes Schoiswohl, Senior Vice President and Head of GaN Systems at Infineon. “We remain focused on advancing innovation and developing semiconductor technologies that address the world’s most pressing challenges—from decarbonization to digital transformation.”

This ruling adds to a series of positive legal outcomes underscoring the value of Infineon’s contributions to GaN technology. In a separate dispute in Germany, the German Patent Office recently upheld the validity of an Infineon patent, with minor amendments. Infineon has also initiated legal action at the Munich Regional Court alleging infringement of that patent.[3] Earlier, in August 2025, the Munich Regional Court I (Landgericht München I) found that an Innoscience product infringed another Infineon patent.[4]

Infineon is a leading integrated device manufacturer (IDM) in the GaN market and holds one of the broadest intellectual property portfolios in the industry, comprising around 450 GaN patent families. GaN plays a vital role in enabling high-performance, energy-efficient power systems across a wide range of applications, including renewable energy, AI data centers, industrial automation, and electric vehicles (EVs). With higher power density, faster switching speeds, and reduced energy loss, GaN semiconductors support more compact designs, lower power consumption, and improved thermal performance. As a global leader in power semiconductor technology, Infineon brings deep expertise across silicon (Si), silicon carbide (SiC), and gallium nitride (GaN).